| PART |
Description |
Maker |
| K9K2G0816QU0M |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Data Sheet
|
Samsung Electronic
|
| MC-4R256FKE8D-840 |
Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 18-BIT)
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| MC-4R256FKE8D-845 MC-4R256FKE8D MC-4R256FKE8D-653 |
190730050
Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 18-BIT)
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| UPD46128512F9-CR2 UPD46128512-X UPD46128512-E11X U |
128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION 128兆位CMOS移动指明内存800万字6位温度范
|
NEC, Corp.
NEC Corp.
|
| K847PH K827P8 K827PH K817P K817P1 K817P2 K817P3 K8 |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
From old datasheet system
Optocoupler with Phototransistor Output
XTAL MTL T/H HC49/U
|
Samsung Electronic
TFUNK
Vishay Telefunken
Vishay Intertechnology,Inc.
|
| M6MGD137W3 M6MGD137W33TP |
The M6MGD137W33TP is a Stacked micro Multi Chip
Package (S- mMCP) that contents 128M-bit Flash memory
and 32M-bit Mobile RAM in a 52-pin TSOP.
|
RENESAS
|
| HM5225165BTT-75 HM5225405BTT-75 HM5225805BTT-75 HM |
256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword ??16-bit ??4-bank/8-Mword ??8-bit ??4-bank /16-Mword ??4-bit ??4-bank PC/133, PC/100 SDRAM
256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133, PC/100 SDRAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133, PC/100 SDRAM 256M LVTTL接口SDRAM33 MHz/100 MHz4 Mword16位4-bank/8-Mword位4银行/ 16 Mword4位4银行PC/133，电 100内存
256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133, PC/100 SDRAM 256M LVTTL接口SDRAM33 MHz/100 MHz Mword6位-bank/8-Mword位银行/ 16 Mword位银行PC/133，电 100内存
256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133, PC/100 SDRAM 32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133, PC/100 SDRAM 256M LVTTL接口SDRAM33 MHz/100 MHz Mword16位-bank/8-Mword位银行/ 16 Mword位银行PC/133，电 100内存
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:30; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
Ultra-High-Precision SOT23 Series Voltage Reference
POT 5K OHM 9MM HORZ NO BUSHING
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:32; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
Circular Connector; Body Material:Aluminum; Series:PT06; Number of Contacts:30; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Socket; Insert Arrangement:18-30
Circular Connector; No. of Contacts:11; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:18; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:18-11
256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133/ PC/100 SDRAM
POT 20K OHM 9MM HORZ NO BUSHING
256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword × 16-bit × 4-bank/8-Mword × 8-bit × 4-bank /16-Mword × 4-bit × 4-bank PC/133, PC/100 SDRAM
|
Elpida Memory, Inc.
http://
|
| HMT112U6AFP8C-G7 HMT112U6AFP8C-G8 HMT112U6AFP8C-H8 |
240pin DDR3 SDRAM Unbuffered DIMMs
64M X 64 DDR DRAM MODULE, 20 ns, DMA204 LEAD FREE, UDIMM-204
128M X 72 DDR DRAM MODULE, 20 ns, DMA204 LEAD FREE, UDIMM-204
256M X 64 DDR DRAM MODULE, 20 ns, DMA204 LEAD FREE, UDIMM-204
256M X 72 DDR DRAM MODULE, 20 ns, DMA204 LEAD FREE, UDIMM-204
128M X 72 DDR DRAM MODULE, DMA240 LEAD FREE, DIMM-240
128M X 64 DDR DRAM MODULE, DMA240 LEAD FREE, DIMM-240
256M X 64 DDR DRAM MODULE, DMA240 LEAD FREE, DIMM-240
256M X 72 DDR DRAM MODULE, DMA240 LEAD FREE, DIMM-240
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| MBM29QM12DH60PCN MBM29QM12DH MBM29QM12DH60 MBM29QM |
128M (8M X 16) BIT
|
FUJITSU[Fujitsu Media Devices Limited]
|
| K9K2G08U0A |
256M x 8 Bit NAND Flash Memory
|
Samsung Electronic
Samsung semiconductor
|
| MX23J25640 MX23J25640TI-50G MX23J25640TC-50 MX23J2 |
256M-BIT NAND INTERFACE XtraROMTM
|
MXIC
MCNIX[Macronix International]
|
